irfp360lc hexfet ? power mosfet pd - 9.1230 revision 0 v dss = 400v r ds(on) = 0.20 w i d = 23a ultra low gate charge reduced gate drive requirement enhanced 30v v gs rating reduced c iss , c oss , c rss isolated central mounting hole dynamic dv/dt rated repetitive avalanche rated absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 23 i d @ t c = 100c continuous drain current, v gs @ 10v 14 a i dm pulsed drain current 92 p d @t c = 25c power dissipation 280 w linear derating factor 2.2 w/c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 1200 mj i ar avalanche current 23 a e ar repetitive avalanche energy 28 mj dv/dt peak diode recovery dv/dt 4.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) parameter min. typ. max. units r q jc junction-to-case ???? ???? 0.45 r q cs case-to-sink, flat, greased surface ???? 0.24 ???? c/w r q ja junction-to-ambient ???? ???? 40 thermal resistance description this new series of low charge hexfet power mosfets achieve significantly lower gate charge over conventional mosfets. utilizing advanced hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. these device improvements combined with the proven ruggedness and reliability of hexfets offer the designer a new standard in power transistors for switching applications. the to-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole.
irfp360lc notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.8 v t j = 25c, i s = 23a, v gs = 0v t rr reverse recovery time ??? 400 600 ns t j = 25c, i f = 23a q rr reverse recovery charge ??? 5.7 8.6 c di/dt = 100a/s t on forward turn-on time repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) v dd = 25v, starting t j = 25c, l = 4.0mh r g = 25 w , i as = 23a. (see figure 12) i sd 23a, di/dt 170a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 400 ??? ??? v v gs = 0v, id = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.49 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.20 w v gs = 10v, i d = 14a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 13 ??? ??? s v ds = 50v , i d = 14a ??? ??? 25 v ds = 400v , v gs = 0v ??? ??? 250 v ds = 320v , v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 110 i d = 23a q gs gate-to-source charge ??? ??? 28 nc v ds = 320v q gd gate-to-drain ("miller") charge ??? ??? 45 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 16 ??? v dd = 200v t r rise time ??? 75 ??? i d = 23a t d(off) turn-off delay time ??? 42 ??? r g = 4.3 w t f fall time ??? 50 ??? r d = 7.9 w, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3400 ??? v gs = 0v c oss output capacitance ??? 540 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 42 ??? ? = 1.0mhz, see fig. 5 intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? ??? 92 ??? ??? 23 a nh l d internal drain inductance ??? 5.0 ??? l s internal source inductance ??? 13 ??? i dss drain-to-source leakage current i gss ns a na
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature irfp360lc fig 1. typical output characteristics, t c = 25 o c fig 2. typical output characteristics, t c = 150 o c 0 . 1 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 4 . 5 v v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s 2 0 s p u l s e w i d t h t = 2 5 c c 0 . 1 1 1 0 1 0 0 1 0 0 0 0 . 1 1 1 0 1 0 0 4 . 5 v v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s 2 0 s p u l s e w i d t h t = 1 5 0 c c 0 . 1 1 1 0 1 0 0 1 0 0 0 4 5 6 7 8 9 1 0 t = 2 5 c t = 1 5 0 c j j g s v , g a t e - t o - s o u r c e v o l t a g e ( v ) d i , d r a i n - t o - s o u r c e c u r r e n t ( a ) v = 5 0 v 2 0 s p u l s e w i d t h ? d s 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 v = 1 0 v g s j t , j u n c t i o n t e m p e r a t u r e ( c ) r , d r a i n - t o - s o u r c e o n r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) ? i = 2 3 a d
irfp360lc fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 5 0 0 0 6 0 0 0 1 1 0 1 0 0 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o - s o u r c e v o l t a g e ( v ) v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g s i s s g s g d d s r s s g d o s s d s g d c ? i s s c ? o s s c ? r s s 0 4 8 1 2 1 6 2 0 0 3 0 6 0 9 0 1 2 0 q , t o t a l g a t e c h a r g e ( n c ) g f o r t e s t c i r c u i t s e e f i g u r e 1 3 v , g a t e - t o - s o u r c e v o l t a g e ( v ) g s ? v = 3 2 0 v ? v = 2 0 0 v v = 8 0 v d s d s d s i = 2 3 a d 1 1 0 1 0 0 0 0 . 4 0 . 8 1 . 2 1 . 6 2 t = 2 5 c t = 1 5 0 c j j v = 0 v ? g s v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r a i n c u r r e n t ( a ) s d s d 1 1 0 1 0 0 1 0 0 0 1 1 0 1 0 0 1 0 0 0 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s i , d r a i n c u r r e n t ( a ) o p e r a t i o n i n t h i s a r e a l i m i t e d b y r d d s ( o n ) 1 0 s 1 0 0 s 1 m s 1 0 m s ? t = 2 5 c ? t = 1 5 0 c s i n g l e p u l s e c j
irfp360lc fig 10a. switching time test circuit v ds 10 v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-case 0 5 1 0 1 5 2 0 2 5 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 t , c a s e t e m p e r a t u r e ( c ) c i , d r a i n c u r r e n t ( a m p s ) d 0 . 0 0 1 0 . 0 1 0 . 1 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ?
irfp360lc fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13a. basic gate charge waveform fig 13b. gate charge test circuit 10 v 10 v 0 5 0 0 1 0 0 0 1 5 0 0 2 0 0 0 2 5 0 0 3 0 0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v = 5 0 v s t a r t i n g t , j u n t i o n t e m p e r a t u r e ( c ) j e , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) a s d d i t o p 1 0 a 1 5 a b o t t o m 2 3 a d
irfp360lc fig 14. for n-channel hexfets * vgs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer *
world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: (44) 0883 713215 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 3l1, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: 6172 37066 ir italy: via liguria 49, 10071 borgaro, torino tel: (39) 1145 10111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo 171 tel: (03)3983 0641 ir southeast asia: 315 outram road, #10-02 tan boon liat building, 0316 tel: 65 221 8371 data and specifications subject to change without notice. irf360lc package outline to-247ac i n t e r n a t i o n a l r e c t i f i e r l o g o a s s e m b l y l o t c o d e e x a m p l e : t h i s i s a n i r f p e 3 0 w i t h a s s e m b l y l o t c o d e 3 a 1 q p a r t n u m b e r d a t e c o d e ( y y w w ) y y = y e a r w w w e e k 3 a 1 q 9 3 0 2 i r f p e 3 0 a part marking information to-247ac
|
